公司名称：成都云麓飞腾电子有限公司

CGHV96100F2
100-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output-Matched, GaN HEMT Power Amplifier
Cree’s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.
CREE现有库存器件
型号 数量 单价
CGHV96100F2 14 14580
CMPA2735075F 20 7950
CGH35240F 10 13500
CGHV35400F 10 14500
CGH40010F 30 1250
CGHV96050F2 10 8250
CMPA0060025F 10 7550


成都云麓飞腾电子有限公司跨国经营，依托于在美欧的海外特殊渠道，公司主要提供各类军用器件，高温器件，停产，断档，冷偏，禁运，以及其他器件。在射频微波/毫米波方面主要经销Northrop Grumman、Cree、TriQuint、HRL、Hittite、Toshiba公司的功放芯片，备常用型号；在高可靠半导体方面主要经销AeroFlex、Intersil、ADI、Xilinx公司的军级及更高等级器件，部分型号备有现货。欢迎来电咨询。
丁凯
成都云麓飞腾电子有限公司
Mobile:15208424859
Tel：028-89994519
Fax: 028-87556798